Scientists create high-speed non-volatile SOT-MRAM memory

Scientists create high-speed non-volatile SOT-MRAM memory

Science 10.20.25

Scientists from Taiwan and the United States have developed a new type of magnetoresistive memory. Their SOT-MRAM is compatible with existing semiconductor manufacturing methods, boasts a switching speed of 1 nanosecond and data retention of over 10 years.

A key achievement is the use of beta-tungsten to generate spin currents. The scientists also added cobalt, improving the thermal stability of the memory: it can now withstand temperatures up to 400°C for 10 hours and up to 700°C for half an hour.

Tests on a 64-kilobit SOT-MRAM array demonstrated a switching speed of approximately 1 nanosecond, comparable to SRAM. For reference, DDR5 has a latency of approximately 14 nanoseconds.

Furthermore, this memory can retain data for over a decade and consumes low power, making it promising for use in data processing centers and devices requiring high speed and energy independence.

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